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Communications à congrès de l'équipe en 2017

Publié le 21 novembre 2018

In situ observation of the formation and migration of defeets in MoSe2/Graphene vander waals heterostructures
Alvarez C and Okuno H
Comm. Orale: MRS Fall Meeting 2017 (Boston, USA, November 27-December 1, 2017)

Mg dopant analysis in (Al)GaN by atom probe tomography and off-axis electron holography
Amichi L, Bougerol C, Mouton I, Cooper D, Vennegues P, De Mierry P, Dussaigne A, Jouneau P-H and Grenier A
Comm. Orale: 20th Microscopy of Semi Conducting Materials MSM XX (Oxford, UK, April 9 - 13, 2017)

Vertically-oriented graphene nanosheets (VOGNs) for micro-supercapacitor devices: Design, performance and comprehension
Aradilla D, Delaunay M, Buhagiar M, Lé T, Gérard J-M and Bidan G
Comm. Poster: Graphene 2017 (Barcelone, Espagne, March 28-31, 2017)
http://phantomsfoundation.com/GRAPHENECONF/2017/Abstracts/Grapheneconf2017_Aradilla_David_316.pdf

Nanoscale Chemical Evolution of Silicon Negative Electrodes Characterized By Low-Loss STEM-Eels
Boniface M, Quazuguel L, Danet J, Guyomard D, Moreau P and Bayle-Guillemaud P
Comm. Poster: 231st ECS Meeting (New Orleans, LO, May 28 – June 1, 2017)
http://ma.ecsdl.org/content/MA2017-01/1/62.abstract

Mg dopant analysis in (Al)GaN by atom probe tomography and off-axis electron holography
Bougerol C, Amichi L, Mouton I, Cooper D, Vennegues P, De Mierry P, Dussaigne A, Jouneau P-H and Grenier A
Comm. Orale: 12th International Conference on Nitride Semiconductors ICNS 12 (Strasbourg, France, July 24-28, 2017)

Large scale 2D MoSe2 on Si02/Si substrate: a template for macroscopic investigations
Dau MT, Vergnaud C, Alvarez C, Marty A, Beigne C, Okuno H, Pochet P and Jamet M
Comm. Poster: 9th International School and Conference on Spintronics and Quantum Information Technology SpinTECH IX (Fukuoka, Japan, June 4-8, 2017)

Spin-to-charge conversion in a single MoSe2 layer grown by van der Waals epitaxy on SiO2/Si
Dau MT, Vergnaud C, Alvarez C, Marty A, Borgne C, Okuno H, Gambarelli S, Pochet P and Jamet M
Comm. Poster: 9th International School and Conference on Spintronics and Quantum Information Technology SpinTECH IX (Fukuoka, Japan, June 4-8, 2017)

Spin-to-charge conversion in a single MoSe2 layer grown by van der Waals epitaxy on SiO2/Si
Dau MT, Vergnaud C, Alvarez C, Marty A, Borgne C, Okuno H, Gambarelli S, Pochet P and Jamet M
Comm. Poster: Graphene 2017 (Barcelone, Espagne, March 28-31, 2017)
http://phantomsfoundation.com/GRAPHENECONF/2017/Abstracts/Grapheneconf2017_Jamet_Matthieu_766.pdf

Epitaxie par jets moléculaires de MoSe2 sur saphir : structure et propriétés électriques
Dau MT, Vergnaud C, Marty A, Rortais F, Beigne C, Boukari H, Bellet-Amalric E, Guigoz V, Renault O, Alvarez C, et al.
Comm. Poster: 18ème Colloque Louis Néel - Couches minces et nanostructures magnétiques (Paris, France, September 24-27, 2017)

Molecular beam opitaxy of MoSe2 on sapphire: structure and electrical properties
Dau MT, Vergnaud C, Marty A, Rortais F, Beigne C, Boukari H, Bellet-Amalric E, Renault O, Alvarez C, Okuno H, et al.
Comm. Poster: Graphene 2017 (Barcelone, Espagne, March 28-31, 2017)
http://phantomsfoundation.com/GRAPHENECONF/2017/Abstracts/Grapheneconf2017_DAU_MINH_TUAN_755.pdf

In-situ Biasing and Off-axis Electron Holography of a ZnO Nanowire
Den Hertog MI, Donatini F, McLeod RA, Monroy E, Sartel C, Sallet V and Pernot J
Comm. Orale: Journées Nationales des Nanofils Semiconducteurs J2N (Grenoble, France, November 13-15, 2017)

Fine structural characterizations in green emitting full InGaN structures grown on relaxed InGaN pseudo-substrate
Even A, Grenier A, Cooper D, Robin E, Haas B, Ferret P, Lévy F, Robin I-C and Dussaigne A
Comm. Orale: 12th International Conference on Nitride Semiconductors ICNS 12 (Strasbourg, France, July 24-28, 2017)

Visualization of Axial p-n Junction on Single GaN Nanowire
Fang Z, Donatini F, Daudin B and Pernot J
Comm. Orale: 12th International Conference on Nitride Semiconductors ICNS 12 (Strasbourg, France, July 24-28, 2017)

Bottom-up Silicon Nanostructures: A Toolbox for Integrated on-Chip EDLCs
Gaboriau D, Brachet M, Boniface M, Aradilla D, Aldakov D, Bidan G, Le Bideau J, Brousse T, Gentile P and Sadki S
Comm. Orale: 2ème Congrès National Science et Technologie des Systèmes pi-Conjugués (Limoges, France, October 16-20, 2017)

Flexible light emitting diodes based on InGaN/GaN nanowires
Guan N, Dai X, Zhang H, Piazza V, Mancini L, Julien FH, Foldyna M, Kapoor A, Bougerol C, Gautier E, et al.
Comm. Orale: 12th International Conference on Nitride Semiconductors ICNS 12 (Strasbourg, France, July 24-28, 2017)

Multiscale Chemical Evolution of Si Electrode upon Cycling in Li-Ion Cell Using Advanced Characterization Tools
Guyomard D, Boniface M, Quazuguel L, Danet J, Dupre N, Lestriez B, De Vito E, Bordes A, Rieutord F, Lyonnard S, et al.
Comm. Orale: 232nd ECS Meeting - Symposium in Honor of Frank McLarnon: Battery Characterization III (National Harbor, Maryland, October 1 - 5, 2017)
http://ma.ecsdl.org/content/MA2017-02/2/147.abstract

Grazing incidence X-rays diffraction: a powerful tool for 21) materials studies
Marty A, Dau MT, Vergnaud C, Alvarez C, Beigne C, Okuno H, Pochet P, Jamet M, Bellet-Amalric E and Renaud G
Comm. Poster: Graphene 2017 (Barcelone, Espagne, March 28-31, 2017)
http://phantomsfoundation.com/GRAPHENECONF/2017/Abstracts/Grapheneconf2017_Marty_Alain_744.pdf

FIB-micro-cleavage, a new technique for higt quality sample preparation in transmission elecron microscopy
Mollard N, Bonef B, Haas B and Rouviere J-L
Comm. Poster: 15ème colloque de la Société Française des Microscopies Sfµ (Bordeaux, France, July 4-7, 2017)

Atomic scale investigation of 2D materials using advanced electron microscopy
Okuno H
Comm. Invitée: Workshop 2D@Grenoble (Grenoble, France, April 13, 2017)

Croissance et sublimation de nanofils: boîtes quantiques CdTe dans ZnTe
Orru M, Robin E, Den Hertog MI, Genuist Y, André R, Moratis K, Ferrand D, Bellet-Amalric E and Cibert J
Comm. Orale: Journées Nationales des Nanofils Semiconducteurs J2N (Grenoble, France, November 13-15, 2017)

Radial dopant segregation in Mg-doped GaN nanowires
Siladie AM, Amichi L, Mollard N, Robin E, Bougerol C, Grenier A, Mouton I, Jouneau P-H, Cros A, Garro N, et al.
Comm. Orale: 12th International Conference on Nitride Semiconductors ICNS 12 (Strasbourg, France, July 24-28, 2017)

Morphology control of GaN nanowires: from needles to nanoparasols
Zhang X, Haas B, Gruart M, Siladie AM, Robin E, Bougerol C, Rouviere J-L and Daudin B
Comm. Orale: 12th International Conference on Nitride Semiconductors ICNS 12 (Strasbourg, France, July 24-28, 2017)