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Publié le 20 novembre 2018

2017

High-quality and homogeneous 200-mm GeOI wafers processed for high strain induction in Ge

Gassenq A, Tardif S, Guilloy K, Pauc N, Bertrand M, Rouchon D, Hartmann J-M, Widiez J, Rothman J, Niquet Y-M, et al.
Proceedings of SPIE 10108 (2017) 101081b
http://dx.doi.org/10.1117/12.2251790

Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications
Tran Thi TN, Morse J, Caliste D, Fernandez B, Eon D, Hartwig J, Barbay C, Mer-Calfati C, Tranchant N, Arnault JC, et al.
Journal of Applied Crystallography 50 (2017) 561-569
http://dx.doi.org/10.1107/s1600576717003831
HAL <hal-01691844>

2016

Contact Resistances in Trigate Devices in a Non-Equilibrium Green's Functions Framework
Bourdet L, Li J, Pelloux-Prayer J, Triozon F, Casse M, Barraud S, Martinie S, Rideau D and Niquet Y-M
Proceedings of the 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS (2016) 112-115
http://dx.doi.org/10.1109/ulis.2016.7440065

High and low-field contact Resistances in Trigate Devices in a Non-Equilibrium Green's Functions Framework
Bourdet L, Li J, Pelloux-Prayer J, Triozon F, Casse M, Barraud S, Martinie S, Rideau D and Niquet Y-M
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (2016) 291-294
http://dx.doi.org/10.1109/SISPAD.2016.7605204

SOI technology for quantum information processing
De Franceschi S, Hutin L, Maurand R, Bourdet L, Bohuslavskyi H, Corna A, Kotekar-Patil D, Barraud S, Jehl X, Niquet Y-M, et al.
Proceedings of the 62nd IEEE International Electron Devices Meeting IEDM (2016) 13.4.1-13.4.4
http:/dx.doi.org/10.1109/IEDM.2016.7838409

SOI platform for spin qubits
De Franceschi S, Maurand R, Corna A, Kotekar-Patil D, Jehl X, Sanquer M, Lavieville R, Hutin L, Barraud S, Vinet M, et al.
Proceedings of the 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS (2016) 124-126
http://dx.doi.org/10.1109/ULIS.2016.7440068

Study of the light emission in Ge layers and strained membranes on Si substrates
Gassenq A, Guilloy K, Pauc N, Hartmann JM, Dias GO, Rouchon D, Tardif S, Escalante J, Duchemin I, Niquet YM, et al.
Thin Solid Films 613 (2016) 64-67
http://dx.doi.org/10.1016/j.tsf.2015.11.039

Non-linear bandgap strain dependence in highly strained germanium using strain redistribution in 200 mm GeOI wafers for laser applications
Gassenq A, Guilloy K, Tardif S, Escalante J, Niquet YM, Duchemin I, Hartmann JM, Rouchon D, Widiez J, Rothman J, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2016) 104-105
https://doi.org/10.1109/GROUP4.2016.7739054

Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications
Guilloy K, Gassenq A, Pauc N, Fernandez JME, Duchemin I, Niquet Y-M, Tardif S, Rieutord F, Gentile P, Dias GO, et al.
Proceedings of SPIE 9891 (2016) 98910X
http://dx.doi.org/10.1117/12.2227497

Picometre-precision atomic structure of inversion domain boundaries in GaN
Haas B, McLeod RA, Auzelle T, Daudin B, Eymery J, Lançon F, Zuo J-M and Rouvière J-L
Proceedings of the 16th European Microscopy Congress EMC (2016) 564–565
http://dx.doi.org/10.1002/9783527808465.EMC2016.6244

Manipulating Spin Polarization and Carrier Mobility in Zigzag Graphene Ribbons using an Electric Field
Li J, Niquet Y-M and Delerue C
Proceedings of the 62nd IEEE International Electron Devices Meeting IEDM (2016) 36.3.1-36.3.4
http:/dx.doi.org/10.1109/IEDM.2016.7838553

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
Mugny G, Pereira FG, Rideau D, Triozon F, Niquet YM, Pala M, Garetto D and Delerue C
Proceedings of the European Solid-State Device Research Conference (2016) 424-427
http://dx.doi.org/10.1109/ESSDERC.2016.7599676

Van der Waals heterostructures of MoSe2 and graphene studied by transmission electron microscopy
Okuno H, Minh TD, Robin E, Marty A, Le Poche H, Pochet P and Jamet M
Proceedings of the 16th European Microscopy Congress EMC (2016) 500–501
http://dx.doi.org/10.1002/9783527808465.EMC2016.6457

Transport in TriGate Nanowire FET: Cross-section effect at the nanometer scale
Pelloux-Prayer J, Casse M, Barraud S, Triozon F, Zeng Z, Niquet YM, Rouviere J-L and Reimbold G
Proceedings of the SOI-3D-Subthreshold Microelectronics Technology Unified Conference S3S (2016) 7804374
http://dx.doi.org/10.1109/S3S.2016.7804374

Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers
Reboud V, Gassenq A, Guilloy K, Osvaldo Dias G, Escalante JM, Tardif S, Pauc N, Hartmann JM, Widiez J, Gomez E, et al.
Proceedings of SPIE 9752 (2016) UNSP 97520F
http://dx.doi.org/10.1117/12.2212597

Fabrication of 200 mm Germanium-On-Insulator (GeOI): a step toward a Germanium photonic platform
Reboud V, Widiez J, Hartmann J-M, Gomez E, Gassenq A, Guilloy K, Bertrand M, Tardif S, Escalante JM, Pauc N, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2016) 140-142
https://doi.org/10.1109/GROUP4.2016.7739074

NSP: Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs
Rozeau O, Martinie S, Poiroux T, Triozon F, Barraud S, Lacord J, Niquet Y-M, Tabone C, Coquand R, Augendre E, et al.
Proceedings of the 62nd IEEE International Electron Devices Meeting IEDM (2016) 7.5.1-7.5.4
http:/dx.doi.org/10.1109/IEDM.2016.7838369

Highly strained direct bandgap Germanium cavities for a monolithic laser on Si
Zabel T, Marin E, Geiger R, Bozon C, Tardif S, Guilloy K, Gassenq A, Escalante J, Niquet YM, Duchemin I, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2016) 40-41
https://doi.org/10.1109/GROUP4.2016.7739082

Carrier scattering by workfunction fluctuations and interface dipoles in high-kappa/metal gate stacks
Zeng Z, Triozon F and Niquet Y-M
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (2016) 369-372
http://dx.doi.org/10.1109/SISPAD.2016.7605223

Size-dependent carrier mobilities in rectangular silicon nanowire devices
Zeng Z, Triozon F, Niquet Y-M and Barraud S
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (2016) 257-260
http://dx.doi.org/10.1109/SISPAD.2016.7605196

2015

Topological states in multi-orbital honeycomb lattices of HgTe (CdTe) quantum dots
Beugeling W, Kalesaki E, Delerue C, Niquet YM, Vanmaekelbergh D and Morais Smith C
ECS Transactions 69 (2015) 81-88
http://dx.doi.org/10.1149/06905.0081ecst

Direct observation of step nucleation and motion in faceted grain boundaries at atomic resolution
Dahmen U, Gautam A, Ophus C, Bowers M and Lancon F
Proceedings of the International Conference on Solid-Solid Phase Transformations in Inorganic Materials PTM 2015 (2015) 673-674
http://www.programmaster.org/PM/PM.nsf/ApprovedAbstracts/C626DE04B9BD275585257D83001E123B?OpenDocument

Design rules to control the tensile strain in Ge mu-membranes fabricated from GeOI substrates for photonics applications
Dias GO, Rouchon D, Widiez J, Hartmann JM, Fowler D, Chelnokov A, Reboud V, Gassenq A, Tardif S, Guiloy K, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2015) 133-134
http://dx.doi.org/10.1109/Group4.2015.7305988

Non-linear model of electronic band structure to highly tensile-strained Germanium
Escalante JM, Gassenq A, Tardif S, Guiloy K, Pauc N, Rieutord F, Calvo V, Dias GO, Rouchon D, Widiez J, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2015) 77-78
http://dx.doi.org/10.1109/Group4.2015.7305955

Distributed Bragg Reflectors integration in highly stained Ge micro-bridges on 200 mm GeOI substrates for laser applications
Gassenq A, Tardif S, Guilloy K, Pauc N, Escalante J, Duchemin I, Niquet YM, Rieutord F, Calvo V, Dias GO, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2015) 51-52
http://dx.doi.org/10.1109/Group4.2015.7305999

Photocurrent Spectroscopy and X-ray Microdiffraction Study of Highly Strained Germanium Nanostructures
Guilloy K, Pauc N, Gassenq A, Gentile P, Tardif S, Rieutord F, Escalante J, Duchemin I, Niquet YM, Calvo V, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2015) 173-174
http://dx.doi.org/10.1109/Group4.2015.7305919

Band structure of III-V thin films: an atomistic study of non-parabolic effects in confinement direction
Mugny G, Triozon F, Li J, Niquet YM, Hiblot G, Rideau D and Delerue C
Proceedings of EUROSOI-ULIS 2015 (2015) 301-304
http://dx.doi.org/10.1109/ulis.2015.7063833

Study of the piezoresistive properties of NMOS and PMOS Omega-Gate SOI Nanowire transistors: scalability effects and high stress level
Pelloux-Prayer J, Casse M, Barraud S, Nguyen P, Koyama M, Niquet Y-M, Triozon F, Duchemin I, Abisset A, Idrissi-Eloudrhiri A, et al.
Technical Digest of the International Electron Devices Meeting (2015) 20.5.1-20.5.4
http://dx.doi.org/10.1109/iedm.2014.7047090

Strain Effect on Mobility in Nanowire MOSFETs down to 10nm Width: Geometrical Effects and Piezoresistive Model
Pelloux-Prayer J, Casse M, Triozon F, Barraud S, Niquet YM, Rouviere J-L, Faynot O and Reimbold G
Proceedings of the 45th European Solid-State Device Research Conference ESSDERC (2015) 210-213
http://dx.doi.org/10.1109/essderc.2015.7324752

TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment
Tavernier C, Pereira FG, Nier O, Rideau D, Monsieur F, Torrente G, Haond M, Jaouen H, Noblanc O, Niquet YM, et al.
Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices SISPAD (2015) 4-7
http://dx.doi.org/10.1109/sispad.2015.7292244

2014

Monte Carlo study of effective mobility in short channel FDSOI MOSFETs
Guarnay S, Triozon F, Martinie S, Niquet Y-M and Bournel A
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2014 (2014) 105-108
http://dx.doi.org/10.1109/sispad.2014.6931574

Modeling of FDSOI and Trigate devices : What can we learn from Non-Equilibrium Green's Functions ?
Niquet YM, Nguyen VH, Triozon F, Duchemin I, Li J, Nier O and Rideau D
Proceedings of the 17th International Workshop on Computational Electronics IWCE 2014 (2014) 6865823
http://dx.doi.org/10.1109/iwce.2014.6865823

Experimental and theoretical investigation of the 'apparent' mobility degradation in Bulk and UTBB-FDSOI devices: a focus on the near-spacer-region resistance
Rideau D, Monsieur F, Nier O, Niquet YM, Lacord J, Quenette V, Mugny G, Hiblot G, Gouget G, Quoirin M, et al.
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2014 (2014) 101-104
http://dx.doi.org/10.1109/sispad.2014.6931573

Edge-states at the onset of a silicon trigate nanowire FET
Voisin B, Nguyen VH, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet YM, De Franceschi S, et al.
Proceedings of the Silicon Nanoelectronics Workshop SNW 2014 (2014) 7348586
http://dx.doi.org/10.1109/snw.2014.7348586

2013

Strain effects on transport properties of Si nanowire devices
Nguyen VH, Triozon F and Niquet YM
Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2013) 89-92
http://dx.doi.org/10.1109/SISPAD.2013.6650581

Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
Rideau D, Niquet YM, Nier O, Cros A, Manceau JP, Palestri P, Esseni D, Nguyen VH, Triozon F, Barbe JC, et al.
Proceedings of International Electron Devices Meeting IEDM 2013 (2013) 12.5.1-12.5.4
http://dx.doi.org/10.1109/IEDM.2013.6724617

The Coupled Atom Transistor: a first realization with shallow donors implanted in a FDSOI silicon nanowire
Voisin B, Roche B, Dupont-Ferrier E, Sklenard B, Cobian M, Jehl X, Cueto O, Wacquez R, Vinet M, Niquet YM, et al.
Proceedings of the 23rd European Solid-State Device Research Conference ESSDERC (2013) 147-150
http://dx.doi.org/10.1109/essderc.2013.6818840

2012

Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures
Daudin B, Bougerol C, Camacho D, Cros A, Gayral B, Hestroffer K, Leclere C, Mata R, Niquet YM, Renevier H, Sam-Giao D, Tourbot G
Physics Procedia 28 (2012) 5-16
http://dx.doi.org/10.1016/j.phpro.2012.03.662

Electron-hole transport asymmetry in boron-doped graphene field effect transistors
Marconcini P, Cresti A, Triozon F, Fiori G, Biel B, Niquet YM, Macucci M, Roche S
Proceedings of the 15th International Workshop on Computational Electronics IWCE 2012 (2012) 6242844
http://dx.doi.org/10.1109/IWCE.2012.6242844

Transport properties of strained silicon nanowires
Niquet YM, Delerue C, Nguyen VH, Krzeminski C, Triozon F
Proceedings of the European Solid-State Device Research Conference ESSDERC 2012 (2012) 290-293
http://dx.doi.org/10.1109/ESSDERC.2012.6343390

Electronic and magnetic properties of semiconducting nanoclusters and large organic molecules: Features interesting for spintronics
Uspenskii YA, Kulatov ET, Titov AA, Tikhonov EV, Michelini F, Raymond L
Journal of Magnetism and Magnetic Materials 324 (2012) 3597-3600
http://dx.doi.org/10.1016/j.jmmm.2012.02.099

2011

Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: Device to circuit performances analysis
Dura J, Martinie S, Munteanu D, Triozon F, Barraud S, Niquet YM, Autran JL
Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2011, (2011) 43-46
http://dx.doi.org/10.1109/SISPAD.2011.6035045

Analytical model of ballistic current for GAA nanowire MOSFET including band structure effects: Application to ring oscillator
Dura J, Martinie S, Munteanu D, Triozon F, Barraud S, Niquet YM, Barbé JC, Autran JL
Proceedings of the 12th International Conference on Ultimate Integration on Silicon (2011) 46-49
http://dx.doi.org/10.1109/ULIS.2011.5758018

Stability of Frenkel pairs in Si(100) surface in the presence of germanium and oxygen atoms
Fetah S, Chikouche A, Dkhissi A, Landa G, Pochet P
Microelectronic Engineering 88 (2011) 503-505
http://dx.doi.org/10.1016/j.mee.2010.11.044

Electron-phonon scattering in Si and Ge: From bulk to nanodevices
Rideau D, Zhang W, Niquet YM, Delerue C, Tavernier C, Jaouen H
Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2011, (2011) 47-50
http://dx.doi.org/10.1109/SISPAD.2011.6035046

2010

Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: Device to circuit performances analysis
Dura J, Martinie S, Munteanu D, Triozon F, Barraud S, Niquet YM, Autran JL
Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2011, (2011) 43-46
http://dx.doi.org/10.1109/SISPAD.2011.6035045

Analytical model of ballistic current for GAA nanowire MOSFET including band structure effects: Application to ring oscillator
Dura J, Martinie S, Munteanu D, Triozon F, Barraud S, Niquet YM, Barbé JC, Autran JL
Proceedings of the 12th International Conference on Ultimate Integration on Silicon (2011) 46-49
http://dx.doi.org/10.1109/ULIS.2011.5758018

Stability of Frenkel pairs in Si(100) surface in the presence of germanium and oxygen atoms
Fetah S, Chikouche A, Dkhissi A, Landa G, Pochet P
Microelectronic Engineering 88 (2011) 503-505
http://dx.doi.org/10.1016/j.mee.2010.11.044

Electron-phonon scattering in Si and Ge: From bulk to nanodevices
Rideau D, Zhang W, Niquet YM, Delerue C, Tavernier C, Jaouen H
Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2011, (2011) 47-50
http://dx.doi.org/10.1109/SISPAD.2011.6035046

2009

Fullerene-based materials as catalysts for fuel cells
Gabriel MA, Deutsch T, Franco AA
ECS Transactions 25 (2009) 1-6
http://dx.doi.org/10.1149/1.3301100

Atomistic tight-binding approaches to quantum transport
Niquet YM, Lherbier A, Persson MP, Triozon F, Roche S, Blase X, Rideau D
Proceedings of the 13th International Workshop on Computational Electronics IWCE (2009) 293-296
http://dx.doi.org/10.1109/IWCE.2009.5091086

On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs
Rideau D, Feraille M, Michaillat M, Niquet YM, Tavernier C, Jaouen H
Solid-State Electronics 53 (2009) 452-461
http://dx.doi.org/10.1016/j.sse.2008.08.006

2008

Scaling properties of (111) InAs Nanowire MOSFETs
Lind E, Persson MP, Thelander C, Niquet YM, Samuelson L, Wernersson LE
Proceedings of the Device Research Conference (2008) 179-180
http://dx.doi.org/10.1109/DRC.2008.4800792

Tight-binding versus effective mass approximation calculation of electronic structures of semiconductor nanocrystals and nanowires
Quang NH, Truc NT, Niquet YM
Computational Materials Science 44 (2008) 21-25
http://dx.doi.org/10.1016/j.commatsci.2008.01.023

2007

Joints de grains incommensurables. Reconstruction de l'intersection avec la surface libre et propriété d'hypofriction de l'interface
Lançon F, Pénisson JM, Radetic T, Dahmen U
Proceedings of the 1st 3M colloquium "Interfaces : de l'atome au polycristal" (2007) p. 25

Electronic properties of InAs/GaAs nanowire superlattices
Niquet YM
Physica E: Low-Dimensional Systems and Nanostructures 37 (2007) 204-207
http://dx.doi.org/10.1016/j.physe.2006.07.011

2005

TEM observations on the behavior of facet junctions in interfaces and inclusions

Dahmen U, Johnson E, Penisson JM, Radetic T, Lancon F
Zeitschrift Fur Metallkunde 96 (2005) 413-418
http://www.ijmr.de/directlink.asp?MK018140