Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films
Beche E, Fournel F, Larrey V, Rieutord F and Fillot F
Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems 21 (2015) 953-959
http://dx.doi.org/10.1007/s00542-015-2437-3
HAL <hal-01586120>
The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV-CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires
Cantelli V, Geaymond O, Ulrich O, Zhou T, Blanc N and Renaud G
Journal of Synchrotron Radiation 22 (2015) 688-700
http://dx.doi.org/10.1107/s1600577515001605
HAL <hal-01588138>
Formation, stability, and atomic structure of the Si(111)-(6x6)Au surface reconstruction: A quantitative study using synchrotron radiation
Daudin R, Nogaret T, Vaysset A, Schuelli TU, Pasturel A and Renaud G
Physical Review B 91 (2015) 165426
http://dx.doi.org/10.1103/PhysRevB.91.165426
HAL <hal-01216767>
The Nature and Origin of "Double Expanded Austenite" in Ni-Based Ni-Ti Alloys Developing Upon Low Temperature Gaseous Nitriding
Fonovic M, Leineweber A, Robach O, Jaegle EA and Mittemeijer EJ
Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science 46A (2015) 4115-4131
http://dx.doi.org/10.1007/s11661-015-2999-9
HAL <hal-01592877>
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
Gassenq A, Guilloy K, Dias GO, Pauc N, Rouchon D, Hartmann J-M, Widiez J, Tardif S, Rieutord F, Escalante J, et al.
Applied Physics Letters 107 (2015) 191904
http://dx.doi.org/10.1063/1.4935590
HAL <hal-01593311>
Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction
Guilloy K, Pauc N, Gassenq A, Gentile P, Tardif S, Rieutord F and Calvo V
Nano Letters 15 (2015) 2429-2433
http://dx.doi.org/10.1021/nl5048219
HAL <hal-01593538>
Subcritical damping of S-A step energy on Si(001) vicinals by lowering terrace stress
Hecquet P
Surface Science 639 (2015) 1-6
http://dx.doi.org/10.1016/j.susc.2015.03.031
HAL <hal-01611029>
Topography of the graphene/Ir(111) moire studied by surface x-ray diffraction
Jean F, Zhou T, Blanc N, Felici R, Coraux J and Renaud G
Physical Review B 91 (2015) 245424
http://dx.doi.org/10.1103/PhysRevB.91.245129
HAL <hal-01167574>
On the reversibility of dislocation slip during small scale low cycle fatigue
Kirchlechner C, Imrich PJ, Liegl W, Poernbacher J, Micha J-S, Ulrich O and Motz C
Acta Materialia 94 (2015) 69-77
http://dx.doi.org/10.1016/j.actamat.2015.04.029
HAL <hal-01615210>
Moire induced organization of size-selected Pt clusters soft landed on epitaxial graphene
Linas S, Jean F, Zhou T, Albin C, Renaud G, Bardotti L and Tournus F
Scientific Reports 5 (2015) 13053
http://dx.doi.org/10.1038/srep13053
HAL <hal-01615912>
Fracture dynamics in implanted silicon
Massy D, Mazen F, Tardif S, Penot J-D, Ragani J, Madeira F, Landru D, Kononchuk O and Rieutord F
Applied Physics Letters 107 (2015) 092102
http://dx.doi.org/10.1063/1.4930016
HAL <hal-01615909>
Insight into the multiscale structure of pre-stretched recast Nafion (R) membranes: Focus on the crystallinity features
Mendil-Jakani H, Pouget S, Gebel G and Pintauro PN
Polymer 63 (2015) 99-107
http://dx.doi.org/10.1016/j.polymer.2015.02.046
HAL <hal-01616556>
Laue-DIC: a new method for improved stress field measurements at the micrometer scale
Petit J, Castelnau O, Bornert M, Zhang FG, Hofmann F, Korsunsky AM, Faurie D, Le Bourlot C, Micha J-S, Robach O, et al.
Journal of Synchrotron Radiation 22 (2015) 980-994
http://dx.doi.org/10.1107/s1600577515005780
HAL <hal-01191406>
Mechanism involved in direct hydrophobic Si(100)-2x1:H bonding
Rauer C, Moriceau H, Rieutord F, Hartmann J-M, Fournel F, Charvet AM, Bernier N, Rochat N, Dansas H, Mariolle D, et al.
Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems 21 (2015) 961-968
http://dx.doi.org/10.1007/s00542-015-2443-5
HAL <hal-01616552>
Self-organized nanoclusters in solution-processed mesoporous In-Ga-Zn-O thin films
Revenant C, Benwadih M and Maret M
Chemical Communications 51 (2015) 1218-1221
http://dx.doi.org/10.1039/c4cc08521c
HAL <hal-01121266>
Local structure around Zn and Ga in solution-processed In-Ga-Zn-O and implications for electronic properties
Revenant C, Benwadih M and Proux O
Physica Status Solidi-Rapid Research Letters 9 (2015) 652-655
http://dx.doi.org/10.1002/pssr.201510322
HAL <hal-01616546>
Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands
Richard M-I, Malachias A, Schuelli TU, Favre-Nicolin V, Zhong Z, Metzger TH and Renaud G
Applied Physics Letters 106 (2015) 012108
http://dx.doi.org/10.1063/1.4905844
HAL <hal-01616545>