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Publications de l'équipe NRS en 2015

Publié le 21 novembre 2018

Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films
Beche E, Fournel F, Larrey V, Rieutord F and Fillot F
Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems 21 (2015) 953-959
HAL <hal-01586120>

The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV-CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires
Cantelli V, Geaymond O, Ulrich O, Zhou T, Blanc N and Renaud G
Journal of Synchrotron Radiation 22 (2015) 688-700
HAL <hal-01588138>

Formation, stability, and atomic structure of the Si(111)-(6x6)Au surface reconstruction: A quantitative study using synchrotron radiation
Daudin R, Nogaret T, Vaysset A, Schuelli TU, Pasturel A and Renaud G
Physical Review B 91 (2015) 165426
HAL <hal-01216767>

The Nature and Origin of "Double Expanded Austenite" in Ni-Based Ni-Ti Alloys Developing Upon Low Temperature Gaseous Nitriding
Fonovic M, Leineweber A, Robach O, Jaegle EA and Mittemeijer EJ
Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science 46A (2015) 4115-4131
HAL <hal-01592877>

1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
Gassenq A, Guilloy K, Dias GO, Pauc N, Rouchon D, Hartmann J-M, Widiez J, Tardif S, Rieutord F, Escalante J, et al.
Applied Physics Letters 107 (2015) 191904
HAL <hal-01593311>

Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction
Guilloy K, Pauc N, Gassenq A, Gentile P, Tardif S, Rieutord F and Calvo V
Nano Letters 15 (2015) 2429-2433
HAL <hal-01593538>

Subcritical damping of S-A step energy on Si(001) vicinals by lowering terrace stress
Hecquet P
Surface Science 639 (2015) 1-6
HAL <hal-01611029>

Topography of the graphene/Ir(111) moire studied by surface x-ray diffraction
Jean F, Zhou T, Blanc N, Felici R, Coraux J and Renaud G
Physical Review B 91 (2015) 245424
HAL <hal-01167574>

On the reversibility of dislocation slip during small scale low cycle fatigue
Kirchlechner C, Imrich PJ, Liegl W, Poernbacher J, Micha J-S, Ulrich O and Motz C
Acta Materialia 94 (2015) 69-77
HAL <hal-01615210>

Moire induced organization of size-selected Pt clusters soft landed on epitaxial graphene
Linas S, Jean F, Zhou T, Albin C, Renaud G, Bardotti L and Tournus F
Scientific Reports 5 (2015) 13053
HAL <hal-01615912>

Fracture dynamics in implanted silicon
Massy D, Mazen F, Tardif S, Penot J-D, Ragani J, Madeira F, Landru D, Kononchuk O and Rieutord F
Applied Physics Letters 107 (2015) 092102
HAL <hal-01615909>

Insight into the multiscale structure of pre-stretched recast Nafion (R) membranes: Focus on the crystallinity features
Mendil-Jakani H, Pouget S, Gebel G and Pintauro PN
Polymer 63 (2015) 99-107
HAL <hal-01616556>

Laue-DIC: a new method for improved stress field measurements at the micrometer scale
Petit J, Castelnau O, Bornert M, Zhang FG, Hofmann F, Korsunsky AM, Faurie D, Le Bourlot C, Micha J-S, Robach O, et al.
Journal of Synchrotron Radiation 22 (2015) 980-994
HAL <hal-01191406>

Mechanism involved in direct hydrophobic Si(100)-2x1:H bonding
Rauer C, Moriceau H, Rieutord F, Hartmann J-M, Fournel F, Charvet AM, Bernier N, Rochat N, Dansas H, Mariolle D, et al.
Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems 21 (2015) 961-968
HAL <hal-01616552>

Self-organized nanoclusters in solution-processed mesoporous In-Ga-Zn-O thin films
Revenant C, Benwadih M and Maret M
Chemical Communications 51 (2015) 1218-1221
HAL <hal-01121266>

Local structure around Zn and Ga in solution-processed In-Ga-Zn-O and implications for electronic properties
Revenant C, Benwadih M and Proux O
Physica Status Solidi-Rapid Research Letters 9 (2015) 652-655
HAL <hal-01616546>

Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands
Richard M-I, Malachias A, Schuelli TU, Favre-Nicolin V, Zhong Z, Metzger TH and Renaud G
Applied Physics Letters 106 (2015) 012108
HAL <hal-01616545>