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Proceedings 2016

Publié le 19 novembre 2018

Investigating the Nucleation and Growth of Quaternary Cu2ZnSnS4 Nanocrystals
Agnese F, Lefrançois A, Pouget S, Vaure L, Makrygenni O, Chandezon F, Bayle-Guillemaud P, Okuno H, Reiss P and Rouviere J-L
Proceedings of the 16th European Microscopy Congress EMC (2016) 91-92
http://dx.doi.org/10.1002/9783527808465.EMC2016.5986

Quantifying Mg doping in AlGaN layers
Amichi L, Mouton I, Robin E, Delaye V, Mollard N, Vennéguès P, Matta S, Brault J, Grenier A, Jouneau P-H, et al.
Proceedings of the 16th European Microscopy Congress EMC (2016) 602–603
http://dx.doi.org/10.1002/9783527808465.EMC2016.6015

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements
Bonef B, Haas B, Rouviere J-L, Andre R, Bougerol C, Grenier A, Jouneau PH and Zuo JM
Journal of Microscopy 262 (2016) 178-182
http://dx.doi.org/10.1111/jmi.12340

Low-loss STEM-EELS analysis of beam-sensitive lithium-ion negative electrodes
Boniface M, Quazuguel L, Moreau P, Boucher F, Guyomard D and Bayle-Guillemaud P
Proceedings of the 16th European Microscopy Congress EMC (2016) 802-803
http://dx.doi.org/10.1002/9783527808465.EMC2016.6163

Contact Resistances in Trigate Devices in a Non-Equilibrium Green's Functions Framework
Bourdet L, Li J, Pelloux-Prayer J, Triozon F, Casse M, Barraud S, Martinie S, Rideau D and Niquet Y-M
Proceedings of the 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS (2016) 112-115
http://dx.doi.org/10.1109/ulis.2016.7440065

High and low-field contact Resistances in Trigate Devices in a Non-Equilibrium Green's Functions Framework
Bourdet L, Li J, Pelloux-Prayer J, Triozon F, Casse M, Barraud S, Martinie S, Rideau D and Niquet Y-M
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (2016) 291-294
http://dx.doi.org/10.1109/SISPAD.2016.7605204

Mapping electrostatic potentials and deformation in semiconductor devices by off-axis electron holography and other techniques
Boureau V, Cooper D, Bernier N and Rouviere J-L
Proceedings of the 16th European Microscopy Congress EMC (2016) 747–748
http://dx.doi.org/10.1002/9783527808465.EMC2016.6383

Magnetic sublattices in Np2Co17 and Np2Ni17
Colineau E, Hen A, Sanchez JP, Griveau JC, Magnani N, Eloirdi R, Halevy I, Gaczynski P, Orion I, Shick AB, et al.
Hyperfine Interactions 237 (2016) 80
http://dx.doi.org/10.1007/s10751-016-1239-z

Deformation mapping in a TEM: Dark Field Electron Holography, Nanobeam Electron Diffraction, Precession Electron Diffraction and GPA compared
Cooper D, Bernier N and Rouviere J-L
Proceedings of the 16th European Microscopy Congress EMC (2016) 627–628
http://dx.doi.org/10.1002/9783527808465.EMC2016.6385

Field mapping of semiconductor devices in a transmission electron microscope with nanometre scale resolution by off-axis electron holography and precession electron diffraction
Cooper D, Bernier N and Rouviere J-L
Proceedings of the 15th International Conference on Nanotechnology IEEE-NANO (2016) 777-780
http://dx.doi.org/10.1109/nano.2015.7388725

SOI technology for quantum information processing
De Franceschi S, Hutin L, Maurand R, Bourdet L, Bohuslavskyi H, Corna A, Kotekar-Patil D, Barraud S, Jehl X, Niquet Y-M, et al.
Proceedings of the 62nd IEEE International Electron Devices Meeting IEDM (2016) 13.4.1-13.4.4
http:/dx.doi.org/10.1109/IEDM.2016.7838409

SOI platform for spin qubits
De Franceschi S, Maurand R, Corna A, Kotekar-Patil D, Jehl X, Sanquer M, Lavieville R, Hutin L, Barraud S, Vinet M, et al.
Proceedings of the 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS (2016) 124-126
http://dx.doi.org/10.1109/ULIS.2016.7440068

In-situ propagation of Al in germanium nanowires observed by transmission electron microscopy
El Hajraoui K, Robin E, Lopez-Haro M, Zeiner C, Brunbauer F, Kral S, Lugstein A, Rouvière J-L and Hertog MD
Proceedings of the 16th European Microscopy Congress EMC (2016) 205–206
http://dx.doi.org/10.1002/9783527808465.EMC2016.6545

Structural and Electrical Transport Properties of Si doped GaN nanowires
Fang Z, Robin E, Rozas-Jimenez E, Cros A, Donatini F, Mollard N, Pernot J and Daudin B
Proceedings of the Compound Semiconductor Week CSW 2016 (2016) 7528770
https://doi.org/10.1109/ICIPRM.2016.7528770

Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering
Fauquier L, Pelissier B, Jalabert D, Pierre F, Doloy D, Beitia C and Baron T
Surface and Interface Analysis 48 (2016) 436-439
http://dx.doi.org/10.1002/sia.5917

X-ray nanodiffraction in forward scattering and Bragg geometry of a single isolated Ag-Au nanowire
Fernandez S, Richard M-I, Floettoto D, Richter G, Mandula O, Aizarna ME, Favre-Nicolin V, Burghammer M, Schülli T and Thomas O
Thin Solid Films 617 (2016) 9-13
http://dx.doi.org/10.1016/j.tsf.2016.04.039

XPS investigations of graphene surface cleaning using H-2- and Cl-2-based inductively coupled plasma
Ferrah D, Renault O, Petit-Etienne C, Okuno H, Berne C, Bouchiat V and Cunge G
Surface and Interface Analysis 48 (2016) 451-455
http://dx.doi.org/10.1002/sia.6010

Impact Of Water Edge Absorption On Silicon Oxide Direct Bonding Energy
Fournel F, Tedjini M, Larrey V, Rieutord F, Morales C, Bridoux C and Moriceau H
ECS Transactions 75 (2016) 129-134
http://dx.doi.org/10.1149/07509.0129ecst

Study of the light emission in Ge layers and strained membranes on Si substrates
Gassenq A, Guilloy K, Pauc N, Hartmann JM, Dias GO, Rouchon D, Tardif S, Escalante J, Duchemin I, Niquet YM, et al.
Thin Solid Films 613 (2016) 64-67
http://dx.doi.org/10.1016/j.tsf.2015.11.039

Non-linear bandgap strain dependence in highly strained germanium using strain redistribution in 200 mm GeOI wafers for laser applications
Gassenq A, Guilloy K, Tardif S, Escalante J, Niquet YM, Duchemin I, Hartmann JM, Rouchon D, Widiez J, Rothman J, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2016) 104-105
https://doi.org/10.1109/GROUP4.2016.7739054

Graphene monolayer produced on Pt reusable substrates for transparent conductive electrodes applications
Golanski L, Rouchon D, Okuno H and Fugier P
International Journal of Nanotechnology 13 (2016) 678-684
http://dx.doi.org/10.1504/ijnt.2016.079671

Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications
Guilloy K, Gassenq A, Pauc N, Fernandez JME, Duchemin I, Niquet Y-M, Tardif S, Rieutord F, Gentile P, Dias GO, et al.
Proceedings of SPIE 9891 (2016) 98910X
http://dx.doi.org/10.1117/12.2227497

Direct comparison of differential phase contrast and off-axis electron holography for the measurement of electric potentials by the examination of reverse biased Si p-n junctions and III-V samples
Haas B, Cooper D and Rouviere J-L
Proceedings of the 16th European Microscopy Congress EMC (2016) 757-758
http://dx.doi.org/10.1002/9783527808465.EMC2016.6816

Picometre-precision atomic structure of inversion domain boundaries in GaN
Haas B, McLeod RA, Auzelle T, Daudin B, Eymery J, Lançon F, Zuo J-M and Rouvière J-L
Proceedings of the 16th European Microscopy Congress EMC (2016) 564–565
http://dx.doi.org/10.1002/9783527808465.EMC2016.6244

In-situ propagation of a Cu phase in germanium nanowires observed by transmission electron microscopy
Hajraoui KE, Zeiner C, Robin E, Kodjikian S, Lugstein A, Rouvière J-L and Hertog MD
Proceedings of the 16th European Microscopy Congress EMC (2016) 642–643
http://dx.doi.org/10.1002/9783527808465.EMC2016.6513

Adhesion energy and bonding wave velocity measurements
Larrey V, Mauguen G, Fournel F, Radisson D, Rieutord F, Morales C, Bridoux C and Moriceau H
ECS Transactions 75 (2016) 145-152
http://dx.doi.org/10.1149/07509.0145ecst

Manipulating Spin Polarization and Carrier Mobility in Zigzag Graphene Ribbons using an Electric Field
Li J, Niquet Y-M and Delerue C
Proceedings of the 62nd IEEE International Electron Devices Meeting IEDM (2016) 36.3.1-36.3.4
http:/dx.doi.org/10.1109/IEDM.2016.7838553

Zorro: multi-reference dose-fractionated image registration
McLeod R, Haas B and Stahlberg H
Proceedings of the 16th European Microscopy Congress EMC (2016) 693–694
http://dx.doi.org/10.1002/9783527808465.EMC2016.5952

Transfer of ultra-thin semi-conductor films onto flexible substrates
Montmeat P, Brandolisi IDN, Tardif S, Enot T, Enyedi G, Kachtouli R, Besson P, Rieutord F and Fournel F
ECS Transactions 75 (2016) 247-252
http://dx.doi.org/10.1149/07509.0247ecst

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
Mugny G, Pereira FG, Rideau D, Triozon F, Niquet YM, Pala M, Garetto D and Delerue C
Proceedings of the European Solid-State Device Research Conference (2016) 424-427
http://dx.doi.org/10.1109/ESSDERC.2016.7599676

Van der Waals heterostructures of MoSe2 and graphene studied by transmission electron microscopy
Okuno H, Minh TD, Robin E, Marty A, Le Poche H, Pochet P and Jamet M
Proceedings of the 16th European Microscopy Congress EMC (2016) 500–501
http://dx.doi.org/10.1002/9783527808465.EMC2016.6457

Transport in TriGate Nanowire FET: Cross-section effect at the nanometer scale
Pelloux-Prayer J, Casse M, Barraud S, Triozon F, Zeng Z, Niquet YM, Rouviere J-L and Reimbold G
Proceedings of the SOI-3D-Subthreshold Microelectronics Technology Unified Conference S3S (2016) 7804374
http://dx.doi.org/10.1109/S3S.2016.7804374

3D Elemental and interdependent reconstructions based on a novel compressed sensing algorithm in electron tomography
Printemps T, Bernier N, Robin E, Saghi Z and Hervé L
Proceedings of the 16th European Microscopy Congress EMC (2016) 67–68
http://dx.doi.org/10.1002/9783527808465.EMC2016.5940

Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers
Reboud V, Gassenq A, Guilloy K, Osvaldo Dias G, Escalante JM, Tardif S, Pauc N, Hartmann JM, Widiez J, Gomez E, et al.
Proceedings of SPIE 9752 (2016) UNSP 97520F
http://dx.doi.org/10.1117/12.2212597

Fabrication of 200 mm Germanium-On-Insulator (GeOI): a step toward a Germanium photonic platform
Reboud V, Widiez J, Hartmann J-M, Gomez E, Gassenq A, Guilloy K, Bertrand M, Tardif S, Escalante JM, Pauc N, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2016) 140-142
https://doi.org/10.1109/GROUP4.2016.7739074

Edge Water Penetration in Direct Bonding Interface
Rieutord F, Tardif S, Landru D, Kononchuk O, Larrey V, Moriceau H, Tedjini M and Fournel F
ECS Transactions 75 (2016) 163-167
http://dx.doi.org/10.1149/07509.0163ecst

Defect Evolution During Silicon SmartCut (TM)
Rieutord F, Tardif S, Mazen F, Landru D and Kononchuk O
ECS Transactions 75 (2016) 155-160
http://dx.doi.org/10.1149/07504.0155ecst

Discrete STEM/EDX tomography for quantitative 3D reconstructions of chemical nanostructures
Robin E, Lopez-Haro M, Mollard N, Rueda-Fonseca P, Orru M, Bellet-Amalric E, Genuist Y, Andre R, Artioli A, Tatarenko S, et al.
Proceedings of the 16th European Microscopy Congress EMC (2016) 103–104
http://dx.doi.org/10.1002/9783527808465.EMC2016.6339

[39] Quantification of dopants in nanomaterial by SEM/EDS
Robin E, Mollard N, Guilloy K, Pauc N, Gentile P, Fang Z, Daudin B, Amichi L, Jouneau P-H, Bougerol C, et al.
Proceedings of the 16th European Microscopy Congress EMC (2016) 380–381
http://dx.doi.org/10.1002/9783527808465.EMC2016.6335

NSP: Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs
Rozeau O, Martinie S, Poiroux T, Triozon F, Barraud S, Lacord J, Niquet Y-M, Tabone C, Coquand R, Augendre E, et al.
Proceedings of the 62nd IEEE International Electron Devices Meeting IEDM (2016) 7.5.1-7.5.4
http:/dx.doi.org/10.1109/IEDM.2016.7838369

(S)TEM Study of the Influence of Synthesis conditions on the Nanostructure and Performance of Au/CeO2 Model Catalysts
Tinoco M, Fernandez-Garcia S, Lopez-Haro M, Hungria AB, Chen X, Blanco G, Perez-Omil JA, Collins S, Okuno H and Calvino JJ
Proceedings of the 16th European Microscopy Congress EMC (2016) 127–128
http://dx.doi.org/10.1002/9783527808465.EMC2016.6433

Highly strained direct bandgap Germanium cavities for a monolithic laser on Si
Zabel T, Marin E, Geiger R, Bozon C, Tardif S, Guilloy K, Gassenq A, Escalante J, Niquet YM, Duchemin I, et al.
Proceedings of the 12th IEEE International Conference on Group IV Photonics GFP (2016) 40-41
https://doi.org/10.1109/GROUP4.2016.7739082

Carrier scattering by workfunction fluctuations and interface dipoles in high-kappa/metal gate stacks
Zeng Z, Triozon F and Niquet Y-M
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (2016) 369-372
http://dx.doi.org/10.1109/SISPAD.2016.7605223

Size-dependent carrier mobilities in rectangular silicon nanowire devices
Zeng Z, Triozon F, Niquet Y-M and Barraud S
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (2016) 257-260
http://dx.doi.org/10.1109/SISPAD.2016.7605196