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Subject of the Master's internship

Modelling silicon/germanium spin qubits


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Master's internship that can be followed by a thesis
Published on 15 September 2022
Silicon/Germanium spin qubits have made outstanding progress in the past two years [1, 2]. In these devices, the elementary information is stored as a coherent superposition of the spin states of an electron in a Si/SiGe heterostructure, or of a hole in a Ge/SiGe heterostructure. These spins can be manipulated electrically owing to spin-orbit coupling, and are entangled through exchange interactions, allowing for a variety of one- and two-qubit gates required for quantum computing and simulation. Grenoble is developing original spin qubit platforms on Si and Ge, and holds various records in spin lifetimes [3] and spin-photon interactions [4]
 
At IRIG/MEM, we support the progress of these advanced quantum technologies with state-of-the-art modelling [3, 4]. In particular, we are developing the TB_Sim code, able to describe very realistic qubit structures down to the atomic scale if needed. The aim of this master training is to model the quantum dynamics of single and coupled Si/Ge spin qubits in relation with recent experiments, using a combination of analytical and numerical (TB_Sim) techniques [1, 2]
 
This Master thesis can be followed by a PhD fully funded by a grant from the French ANR. The PhD project will address spin manipulation and entanglement in arrays of spin qubits, the response to noise and disorder (decoherence), and the interactions with photons (circuit quantum electrodynamics). The PhD candidate will have the opportunity to interact with a lively community of experimentalists working on spin qubits at CEA and CNRS.

Figure: Model for a silicon spin qubit [3]. The spin of a hole in a silicon channel (red) is controlled by metal gates (white). The yellow shape is an iso-density surface of the hole wave function.
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To apply for this position, send your application (including CV) by e-mail to: Yann-Michel NIQUET.

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