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LEMMA publications in 2011

Published on 19 November 2018
In a nanoscience lab
Bayle-Guillemaud P, Hadji E, Reiss P, Villain J
Comptes Rendus Physique 12 (2011) 614-619
http://dx.doi.org/10.1016/j.crhy.2011.06.009

Luminescence of Polyethylene Glycol Coated CdSeTe/ZnS and InP/ZnS Nanoparticles in the Presence of Copper Cations
Beaune G, Tamang S, Bernardin A, Bayle-Guillemaud P, Fenel D, Schoehn G, Vinet F, Reiss P, Texier I
Chemphyschem 12 (2011) 2247-2254
http://dx.doi.org/10.1002/cphc.201100266

Dark field electron holography for strain measurement
Beche A, Rouviere JL, Barnes JP, Cooper D
Ultramicroscopy 111 (2011) 227-238
http://dx.doi.org/10.1016/j.ultramic.2010.11.030

Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction
Brunetti G, Robert D, Bayle-Guillemaud P, Rouviere JL, Rauch EF, Martin JF, Colin JF, Bertin F, Cayron C
Chemistry of Materials 23 (2011) 4515-4524
http://dx.doi.org/10.1021/cm201783z

Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate
Chen XJ, Hwang JS, Perillat-Merceroz G, Landis S, Martin B, Dang DL, Eymery J, Durand C
Journal of Crystal Growth 322 (2011) 15-22
http://dx.doi.org/10.1016/j.jcrysgro.2011.03.007

Field Mapping with Nanometer-Scale Resolution for the Next Generation of Electronic Devices
Cooper D, de la Pena F, Beche A, Rouviere JL, Servanton G, Pantel R, Morin P
Nano Letters 11 (2011) 4585-4590
http://dx.doi.org/10.1021/nl201813w

Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography
Cooper D, Rouviere JL, Beche A, Kadkhodazadeh S, Semenova ES, Yvind K, Dunin-Borkowski R
Applied Physics Letters 99 (2011) 261911
http://dx.doi.org/10.1063/1.3672194

The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography
Denneulin T, Rouviere JL, Beche A, Py M, Barnes JP, Rochat N, Hartmann JM, Cooper D
Semiconductor Science and Technology 26 (2011) 125010
http://dx.doi.org/10.1088/0268-1242/26/12/125010

Structure and magnetism of Ge3Mn5 clusters
Jain A, Jamet M, Barski A, Devillers T, Yu IS, Porret C, Bayle-Guillemaud P, Favre-Nicolin V, Gambarelli S, Maurel V, Desfonds G, Jacquot JF, Tardif S
Journal of Applied Physics 109 (2011) 013911
http://dx.doi.org/10.1063/1.3531222

Advanced Electron Microscopy Investigation of Ceria-Zirconia-Based Catalysts
Lopez-Haro M, Perez-Omil JA, Hernandez-Garrido JC, Trasobares S, Hungria AB, Cies JM, Midgley PA, Bayle-Guillemaud P, Martinez-Arias A, Bernal S, Delgado JJ, Calvino JJ
Chemcatchem 3 (2011) 1015-1027
http://dx.doi.org/10.1002/cctc.201000306

Two-Bit-Per-Dot Patterned Media for Magnetic Storage
Moritz J, Arm C, Vinai G, Gautier E, Auffret S, Marty A, Bayle-Guillemaud P, Dieny B
Ieee Magnetics Letters 2 (2011) 4500104
http://dx.doi.org/10.1109/LMAG.2010.2098852

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity
Mouti A, Rouviere JL, Cantoni M, Carlin JF, Feltin E, Grandjean N, Stadelmann P
Physical Review B 83 (2011) 195309
http://dx.doi.org/10.1103/PhysRevB.83.195309

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO
Perillat-Merceroz G, Gergaud P, Marotel P, Brochen S, Jouneau PH, Feuillet G
Journal of Applied Physics 109 (2011) 023513
http://dx.doi.org/10.1063/1.3537917

Advanced backside sample preparation for multi-technique surface analysis
Py M, Veillerot M, Fabbri JM, Pierre F, Jalabert D, Roukoss C, Pelissier B, Boujamaa R, Trouiller C, Barnes JP
European Physical Journal-Applied Physics 55 (2011) 31001
http://dx.doi.org/10.1051/epjap/2011110191

Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis
Richard MI, Malachias A, Rouviere JL, Yoon TS, Holmstrom E, Xie YH, Favre-Nicolin V, Holy V, Nordlund K, Renaud G, Metzger TH
Physical Review B 84 (2011) 075314
http://dx.doi.org/10.1103/PhysRevB.84.075314

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire
Vo-Van C, Kimouche A, Reserbat-Plantey A, Fruchart O, Bayle-Guillemaud P, Bendiab N, Coraux J
Applied Physics Letters 98 (2011) 181903
http://dx.doi.org/10.1063/1.3585126

Modeling magnetotransport in inhomogeneous (Ge,Mn) films
Yu IS, Jamet M, Marty A, Devillers T, Barski A, Beigne C, Bayle-Guillemaud P, Cibert J
Journal of Applied Physics 109 (2011) 123906
http://dx.doi.org/10.1063/1.3596575