Unraveling the strain state of GaN down to single nanowires
Auzelle T, Biquard X, Bellet-Amalric E, Fang Z, Roussel H, Cros A and Daudin B
Journal of Applied Physics 120 (2016) 225701
http://dx.doi.org/10.1063/1.4971967

Analysis of the full stress tensor in a micropillar: Ability of and difficulties arising during synchrotron based mu Laue diffraction
Davydok A, Jaya BN, Robach O, Ulrich O, Micha J-S and Kirchlechner C
Materials & Design 108 (2016) 68-75
http://dx.doi.org/10.1016/j.matdes.2016.06.098

Integrated experimental and computational approach for residual stress investigation near through-silicon vias
Deluca M, Hammer R, Keckes J, Kraft J, Schrank F, Todt J, Robach O, Micha J-S and Defregger S
Journal of Applied Physics 120 (2016) 195104
http://dx.doi.org/10.1063/1.4967927

Tuning the conductivity type in a room temperature magnetic oxide: Ni-doped Ga0.6Fe1.4O3 thin films
Demchenko A, Chang Y, Chikoidze E, Berini B, Lefevre C, Roulland F, Ulhaq-Bouillet C, Versini G, Barre S, Leuvrey C, et al.
RSC Advances 6 (2016) 28248-28256
http://dx.doi.org/10.1039/c6ra01540a

In-situ X-ray mu Laue diffraction study of copper through-silicon vias
Ferreira Sanchez D, Reboh S, Weleguela MLD, Micha J-S, Robach O, Mourier T, Gergaud P and Bleuet P
Microelectronics Reliability 56 (2016) 78-84
http://dx.doi.org/10.1016/j.microrel.2015.10.008

Atomic structure of Pt nanoclusters supported by graphene/Ir(111) and reversible transformation under CO exposure
Franz D, Blanc N, Coraux J, Renaud G, Runte S, Gerber T, Busse C, Michely T, Feibelman PJ, Hejral U, et al.
Physical Review B 93 (2016) 045426
http://dx.doi.org/10.1103/PhysRevB.93.045426

Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
Gassenq A, Milord L, Aubin J, Guilloy K, Tardif S, Pauc N, Rothman J, Chelnokov A, Hartmann J-M, Reboud V, et al.
Applied Physics Letters 109 (2016) 242107
http://dx.doi.org/10.1063/1.4971397

Accurate strain measurements in highly strained Ge microbridges
Gassenq A, Tardif S, Guilloy K, Dias GO, Pauc N, Duchemin I, Rouchon D, Hartmann JM, Widiez J, Escalante J, et al.
Applied Physics Letters 108 (2016) 241902
http://dx.doi.org/10.1063/1.4953788

Structure and Dopant Engineering in PEDOT Thin Films: Practical Tools for a Dramatic Conductivity Enhancement
Gueye MN, Carella A, Massonnet N, Yvenou E, Brenet S, Faure-Vincent J, Pouget S, Rieutord F, Okuno H, Benayad A, et al.
Chemistry of Materials 28 (2016) 3462-3468
http://dx.doi.org/10.1021/acs.chemmater.6b01035

Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
Guilloy K, Pauc N, Gassenq A, Niquet Y-M, Escalante J-M, Duchemin I, Tardif S, Dias GO, Rouchon D, Widiez J, et al.
ACS Photonics 3 (2016) 1907-1911
http://dx.doi.org/10.1021/acsphotonics.6b00429

KB scanning of X-ray beam for Laue microdiffraction on accelero-phobic samples: application to in situ mechanically loaded nanowires
Leclere C, Cornelius TW, Ren Z, Robach O, Micha JS, Davydok A, Ulrich O, Richter G and Thomas O
Journal of Synchrotron Radiation 23 (2016) 1395-1400
http://dx.doi.org/10.1107/s1600577516013849

Determination of the cationic distribution in oxidic thin films by resonant X-ray diffraction: the magnetoelectric compound Ga2-xFexO3
Lefevre C, Thomasson A, Roulland F, Favre-Nicolin V, Joly Y, Wakabayashi Y, Versini G, Barre S, Leuvrey C, Demchenko A, et al.
Journal of Applied Crystallography 49 (2016) 1308-1314
http://dx.doi.org/10.1107/s1600576716010001

PyNX.Ptycho: a computing library for X-ray coherent diffraction imaging of nanostructures
Mandula O, Aizarna ME, Eymery J, Burghammer M and Favre-Nicolin V
Journal of Applied Crystallography 49 (2016) 1842-1848
http://dx.doi.org/10.1107/s1600576716012279

Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction
Martin Y, Rouviere J-L, Zuo JM and Favre-Nicolin V
Ultramicroscopy 160 (2016) 64-73
http://dx.doi.org/10.1016/j.ulisamic.2014.12.009

Strain profiles in ion implanted ceramic polycrystals: An approach based on reciprocal-space crystal selection
Palancher H, Goudeau P, Boulle A, Rieutord F, Favre-Nicolin V, Blanc N, Martin G, Fouet J and Onofri C
Applied Physics Letters 108 (2016) 031903
http://dx.doi.org/10.1063/1.4939972

Strain relaxation in He implanted UO2 polycrystals under thermal treatment: An in situ XRD study
Palancher H, Kachnaoui R, Martin G, Richard A, Richaud JC, Onofri C, Belin R, Boulle A, Rouquette H, Sabathier C, et al.
Journal of Nuclear Materials 476 (2016) 63-76
http://dx.doi.org/10.1016/j.jnucmat.2016.04.023

On the Accuracy of Elastic Strain Field Measurements by Laue Microdiffraction and High-Resolution EBSD: a Cross-Validation Experiment
Plancher E, Petit J, Maurice C, Favier V, Saintoyant L, Loisnard D, Rupin N, Marijon JB, Ulrich O, Bornert M, et al.
Experimental Mechanics 56 (2016) 483-492
http://dx.doi.org/10.1007/s11340-015-0114-1

Morphology of sol-gel porous In-Ga-Zn-O thin films as a function of annealing temperatures
Revenant C and Benwadih M
Thin Solid Films 616 (2016) 643-648
http://dx.doi.org/10.1016/j.tsf.2016.09.047

Temperature evolution of defects and atomic ordering in Si1-xGex islands on Si(001)
Richard MI, Malachias A, Stoffel M, Merdzhanova T, Schmidt OG, Renaud G, Metzger TH and Schuelli TU
Journal of Applied Physics 119 (2016) 085704
http://dx.doi.org/10.1063/1.4942530

Large and Uniform Optical Emission Shifts in Quantum Dots Strained along Their Growth Axis
Stepanov P, Elzo-Aizarna M, Bleuse J, Malik NS, Cure Y, Gautier E, Favre-Nicolin V, Gerard J-M and Claudon J
Nano Letters 16 (2016) 3215-3220
http://dx.doi.org/10.1021/acs.nanolett.6b00678

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
Tardif S, Gassenq A, Guilloy K, Pauc N, Osvaldo Dias G, Hartmann J-M, Widiez J, Zabel T, Marin E, Sigg H, et al.
Journal of Applied Crystallography 49 (2016) 1402-1411
http://dx.doi.org/10.1107/s1600576716010347

Interface water diffusion in silicon direct bonding
Tedjini M, Fournel F, Moriceau H, Larrey V, Landru D, Kononchuk O, Tardif S and Rieutord F
Applied Physics Letters 109 (2016) 111603
http://dx.doi.org/10.1063/1.4962464

InGaN nanowires with high InN molar fraction: growth, structural and optical properties
Zhang X, Lourenco-Martins H, Meuret S, Kociak M, Haas B, Rouviere J-L, Jouneau P-H, Bougerol C, Auzelle T, Jalabert D, et al.
Nanotechnology 27 (2016) 195704
http://dx.doi.org/10.1088/0957-4484/27/19/195704

Revealing the mechanism of passive transport in lipid bilayers via phonon-mediated nanometre-scale density fluctuations
Zhernenkov M, Bolmatov D, Soloviov D, Zhernenkov K, Toperverg BP, Cunsolo A, Bosak A and Cai YQ
Nature Communications 7 (2016) 11575
http://dx.doi.org/10.1038/ncomms11575